Utt, Daniel Thomas (2022)
Defects in high-entropy alloys studied by atomic scale computer simulations.
Technische Universität Darmstadt
doi: 10.26083/tuprints-00020929
Ph.D. Thesis, Primary publication, Publisher's Version
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Item Type: | Ph.D. Thesis | ||||
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Type of entry: | Primary publication | ||||
Title: | Defects in high-entropy alloys studied by atomic scale computer simulations | ||||
Language: | English | ||||
Referees: | Albe, Prof. Dr. Karsten ; Maresca, Ass.-Prof. Francesco | ||||
Date: | 2022 | ||||
Place of Publication: | Darmstadt | ||||
Collation: | VIII, 185 Seiten | ||||
Date of oral examination: | 27 September 2021 | ||||
DOI: | 10.26083/tuprints-00020929 | ||||
Abstract: | High-entropy alloys (HEAs) are a new class of metal alloys containing multiple principal elements in concentrations between 5-35 at%. Due to their inherent chemical complexity, they possess a wide range of interesting properties, which we explore in greater detail throughout this thesis. Reduced or sluggish diffusion has been discussed for HEAs since their inception. We perform time-scale bridging simulations on the pseudo-binary (CoCrFeMn)_(1-x)Ni_x HEA, combining atomistic simulations of the vacancy migration energies and equilibrium vacancy concentrations with kinetic Monte Carlo simulations of tracer diffusion trajectories. Here, we extend the established random alloy model to account for the local chemical fluctuations within the complex alloy matrix. The results compare favorably to experimental tracer diffusion measurements. Dislocations in HEAs also interact with chemical fluctuations in the random matrix. This leads to a meandering dislocation line shape and localized pinning during dislocation glide. We find a physically motivated descriptor for these pinning sites in the form of a per-atom Peierls force. This descriptor shows good spatial correlation with observed dislocation pinning sites during glide. Furthermore, we show that the density of strong pinning sites in an alloy correlates not only with the critical shear required to initiate dislocation glide but also the dislocation mobility. We report on the grain growth properties of a CoCuFeNi model HEA. Atomistic simulations give unique insights into the effects of random chemical fluctuations by comparison of the HEA to its average-atom counterpart. The average-atom is a virtual element which has the same long-range properties as the alloy but consists only of a single element. Additionally, solute segregation to grain boundaries (GBs) is considered. The comparison of two different samples, namely a Sigma 11 GB and a large-scale nanocrystalline sample, reveals that while grain growth is reduced in the HEA compared to other pure metals, this does not stem from the chemical randomness. Instead, solute segregation is necessary to pin GBs up to high temperatures. |
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Status: | Publisher's Version | ||||
URN: | urn:nbn:de:tuda-tuprints-209296 | ||||
Classification DDC: | 500 Science and mathematics > 530 Physics | ||||
Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Materials Modelling | ||||
TU-Projects: | DFG|STU611/2-1|Thermomechanische Ei | ||||
Date Deposited: | 17 Mar 2022 09:55 | ||||
Last Modified: | 03 Aug 2022 09:08 | ||||
URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/20929 | ||||
PPN: | 492817650 | ||||
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