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This paper investigates fully integrated Terahertz (THz) Schottky detectors using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) layers. The combination of InGaAs and metallic NWs shows improved performance at zero-bias than a GaAs based detector with a simulated capacitance of 0.5 fF and a series resistance of 29.7 Ω . Thus, the calculated maximum cut-off frequency of 2.6 THz was obtained for a NW contacted vertical InGaAs THz detector. Initial THz measurements were carried out using a common THz setup for frequencies up to 1.2 THz. A responsivity of 0.81 A/W and a low noise-equivalent power (NEP) value of 7 pW/√Hz at 1 THz were estimated using the measured IV-characteristics of the zero-bias NW-InGaAs based THz Schottky detector.