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Photoemission study and band alignment of the CuInSe₂(001)/CdS heterojunction

Schulmeyer, T. ; Hunger, R. ; Klein, Andreas ; Jaegermann, Wolfram ; Niki, S. (2021):
Photoemission study and band alignment of the CuInSe₂(001)/CdS heterojunction. (Publisher's Version)
In: Applied Physics Letters, 84 (16), pp. 3067-3069. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019885,
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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Photoemission study and band alignment of the CuInSe₂(001)/CdS heterojunction
Language: English
Abstract:

The contact formation of thin-film epitaxial CuInSe₂(001) with a physical-vapor-deposited CdS layer is presented in this work. Synchrotron-excited photoelectron spectroscopy was used for this investigation. The epitaxial CuInSe₂ films contain a surface layer of reduced Cu stoichiometry similar to the ordered defect compound CuIn₃Se₅. A valence band offset of 0.79±0.15 eV has been determined for this heterojunction. The comparison to literature data indicates that neither surface orientation nor surface copper content have a major impact on the valence band offset of CuIn₃Se₅, respectively, CuInSe₂ with CdS.

Journal or Publication Title: Applied Physics Letters
Journal volume: 84
Number: 16
Publisher: AIP Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 12 Nov 2021 13:40
Last Modified: 12 Nov 2021 13:41
DOI: 10.26083/tuprints-00019885
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-198851
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19885
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