Späth, B. ; Fritsche, J. ; Klein, Andreas ; Jaegermann, Wolfram (2021)
Nitrogen doping of ZnTe and its influence on CdTe∕ZnTe interfaces.
In: Applied Physics Letters, 2007, 90 (6)
doi: 10.26083/tuprints-00019883
Article, Secondary publication, Publisher's Version
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Item Type: | Article |
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Type of entry: | Secondary publication |
Title: | Nitrogen doping of ZnTe and its influence on CdTe∕ZnTe interfaces |
Language: | English |
Date: | 12 November 2021 |
Place of Publication: | Darmstadt |
Year of primary publication: | 2007 |
Publisher: | AIP Publishing |
Journal or Publication Title: | Applied Physics Letters |
Volume of the journal: | 90 |
Issue Number: | 6 |
Collation: | 3 Seiten |
DOI: | 10.26083/tuprints-00019883 |
Corresponding Links: | |
Abstract: | The properties of nitrogen doped ZnTe films and in situ formed heterointerfaces to CdTe were investigated using photoelectron spectroscopy and electrical measurements. The p doping of ZnTe with nitrogen is controlled during physical vapor deposition with an additional nitrogen plasma source. The resistivity was determined by four-point measurements and a minimum resistivity of ρ = 0.04 Ω cm was found. The valence band offset of the CdTe/ZnTe interface is EVBO = 0.05 eV. |
Status: | Publisher's Version |
URN: | urn:nbn:de:tuda-tuprints-198839 |
Classification DDC: | 500 Science and mathematics > 530 Physics |
Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
Date Deposited: | 12 Nov 2021 13:39 |
Last Modified: | 13 Feb 2024 14:46 |
URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19883 |
PPN: | 503920851 |
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