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Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors

Klein, Andreas ; Jaegermann, Wolfram (2021):
Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors. (Publisher's Version)
In: Applied Physics Letters, 74 (16), pp. 2283-2285. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019855,
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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors
Language: English
Abstract:

Valence-band photoelectron spectroscopy of CuInSe₂, CuInS₂, and CuGaSe₂ surfaces and interfaces give evidence for the formation of Cu vacancies when the Fermi level moves upwards in the band gap due to contact formation. The effect might be a key issue in understanding basic properties of solar cell devices based on these materials.

Journal or Publication Title: Applied Physics Letters
Journal volume: 74
Number: 16
Publisher: AIP Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 11 Nov 2021 13:23
Last Modified: 11 Nov 2021 13:23
DOI: 10.26083/tuprints-00019855
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-198554
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19855
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