Klein, Andreas ; Jaegermann, Wolfram (2021)
Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors.
In: Applied Physics Letters, 1999, 74 (16)
doi: 10.26083/tuprints-00019855
Article, Secondary publication, Publisher's Version
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| Item Type: | Article |
|---|---|
| Type of entry: | Secondary publication |
| Title: | Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors |
| Language: | English |
| Date: | 2021 |
| Place of Publication: | Darmstadt |
| Year of primary publication: | 1999 |
| Publisher: | AIP Publishing |
| Journal or Publication Title: | Applied Physics Letters |
| Volume of the journal: | 74 |
| Issue Number: | 16 |
| DOI: | 10.26083/tuprints-00019855 |
| Corresponding Links: | |
| Origin: | Secondary publication service |
| Abstract: | Valence-band photoelectron spectroscopy of CuInSe₂, CuInS₂, and CuGaSe₂ surfaces and interfaces give evidence for the formation of Cu vacancies when the Fermi level moves upwards in the band gap due to contact formation. The effect might be a key issue in understanding basic properties of solar cell devices based on these materials. |
| Status: | Publisher's Version |
| URN: | urn:nbn:de:tuda-tuprints-198554 |
| Classification DDC: | 500 Science and mathematics > 530 Physics |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 11 Nov 2021 13:23 |
| Last Modified: | 19 Jan 2023 12:46 |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19855 |
| PPN: | 503874345 |
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