Fritsche, R. ; Wisotzki, E. ; Islam, A. B. M. O. ; Thissen, A. ; Klein, Andreas ; Jaegermann, Wolfram ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2021)
Electronic passivation of Si(111) by Ga–Se half-sheet termination.
In: Applied Physics Letters, 2002, 80 (8)
doi: 10.26083/tuprints-00019835
Article, Secondary publication, Publisher's Version
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| Item Type: | Article |
|---|---|
| Type of entry: | Secondary publication |
| Title: | Electronic passivation of Si(111) by Ga–Se half-sheet termination |
| Language: | English |
| Date: | 2021 |
| Place of Publication: | Darmstadt |
| Year of primary publication: | 2002 |
| Publisher: | AIP Publishing |
| Journal or Publication Title: | Applied Physics Letters |
| Volume of the journal: | 80 |
| Issue Number: | 8 |
| DOI: | 10.26083/tuprints-00019835 |
| Corresponding Links: | |
| Origin: | Secondary publication service |
| Abstract: | A Si(111):GaSe van der Waals surface is prepared using sequential deposition of Ga and Se at elevated temperature on a Si(111)-7×7 surface. Surface properties were investigated by soft x-ray photoelectron spectroscopy and low-energy electron diffraction. The Si(111)-1×1:GaSe surface remains with electronic surface potentials near flatband condition. |
| Status: | Publisher's Version |
| URN: | urn:nbn:de:tuda-tuprints-198355 |
| Classification DDC: | 500 Science and mathematics > 530 Physics |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 08 Nov 2021 12:11 |
| Last Modified: | 17 Jan 2023 09:18 |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19835 |
| PPN: | 503671517 |
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