Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device

Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide - an unusual property for an oxide semiconductor - are discussed for the first time regarding their role in the resistive switching mechanism.