2019
Zweitveröffentlichung
Konferenzveröffentlichung
Postprint
High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors
High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors
File(s)
Hauptpublikation
EuMW_Paper_OpenAccess.pdf
Format: Adobe PDF
Size: 540.03 KB
Kurzbeschreibung (Abstract)
This paper reviews progress on ErAs:In(Al)GaAs photomixers for operation with telecom lasers at 1550 nm, including linearity and absorption coefficient measurements, specifications, packaging example, and applications in vector spectrometry. We have achieved a receiver noise equivalent power as low as 1.81 fW/Hz at 188 GHz under continuous-wave operation and a bandwidth of more than 6 THz and a peak dynamic range of 89 dB under pulsed operation.
Freie Schlagworte
Sprache
Englisch
Institution
Universitäts- und Landesbibliothek Darmstadt
Ort
Darmstadt
Veranstaltungstitel
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
Veranstaltungsort
Bochum
Startdatum der Veranstaltung
16.07.2019
Enddatum der Veranstaltung
18.07.2019
Buchtitel
IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
Startseite
115
Endseite
117
ISBN
978-1-7281-0936-7
Verlag
IEEE
Publikationsjahr der Erstveröffentlichung
2019
Verlags-DOI
PPN
Zusätzliche Infomationen
German Research Foundation (DFG) funding project 278381540 (REPHCON)