Wendel, Philipp ; Dietz, Dominik ; Deuermeier, Jonas ; Klein, Andreas (2021):
Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes. (Publisher's Version)
In: Materials, 14 (10), MDPI, e-ISSN 1996-1944,
DOI: 10.26083/tuprints-00019377,
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| Item Type: | Article |
|---|---|
| Origin: | Secondary publication via sponsored Golden Open Access |
| Status: | Publisher's Version |
| Title: | Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes |
| Language: | English |
| Abstract: | The current-voltage characteristics of ZnO/RuO₂ Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies. |
| Journal or Publication Title: | Materials |
| Volume of the journal: | 14 |
| Issue Number: | 10 |
| Publisher: | MDPI |
| Collation: | 7 Seiten |
| Classification DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM) |
| Date Deposited: | 26 Aug 2021 12:14 |
| Last Modified: | 26 Aug 2021 12:14 |
| DOI: | 10.26083/tuprints-00019377 |
| Corresponding Links: | |
| URN: | urn:nbn:de:tuda-tuprints-193772 |
| Additional Information: | Keywords: Schottky barrier; resistive switching; zinc oxide; ruthenium oxide; oxygen vacancies |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19377 |
| PPN: | |
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