TU Darmstadt / ULB / TUprints

Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes

Wendel, Philipp ; Dietz, Dominik ; Deuermeier, Jonas ; Klein, Andreas (2021)
Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes.
In: Materials, 2021, 14 (10)
doi: 10.26083/tuprints-00019377
Article, Secondary publication, Publisher's Version

materials-14-02678 (1).pdf
Copyright Information: CC BY 4.0 International - Creative Commons, Attribution.

Download (383kB) | Preview
Item Type: Article
Type of entry: Secondary publication
Title: Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes
Language: English
Date: 2021
Year of primary publication: 2021
Publisher: MDPI
Journal or Publication Title: Materials
Volume of the journal: 14
Issue Number: 10
Collation: 7 Seiten
DOI: 10.26083/tuprints-00019377
Corresponding Links:
Origin: Secondary publication via sponsored Golden Open Access

The current-voltage characteristics of ZnO/RuO₂ Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-193772
Additional Information:

Keywords: Schottky barrier; resistive switching; zinc oxide; ruthenium oxide; oxygen vacancies

Classification DDC: 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM)
Date Deposited: 26 Aug 2021 12:14
Last Modified: 26 Aug 2021 12:14
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19377
Actions (login required)
View Item View Item