Wendel, Philipp ; Dietz, Dominik ; Deuermeier, Jonas ; Klein, Andreas (2021):
Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes. (Publisher's Version)
In: Materials, 14 (10), MDPI, e-ISSN 1996-1944,
DOI: 10.26083/tuprints-00019377,
[Article]
|
Text
materials-14-02678 (1).pdf Copyright Information: CC BY 4.0 International - Creative Commons, Attribution. Download (383kB) | Preview |
Item Type: | Article |
---|---|
Origin: | Secondary publication via sponsored Golden Open Access |
Status: | Publisher's Version |
Title: | Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes |
Language: | English |
Abstract: | The current-voltage characteristics of ZnO/RuO₂ Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies. |
Journal or Publication Title: | Materials |
Volume of the journal: | 14 |
Issue Number: | 10 |
Publisher: | MDPI |
Collation: | 7 Seiten |
Classification DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM) |
Date Deposited: | 26 Aug 2021 12:14 |
Last Modified: | 26 Aug 2021 12:14 |
DOI: | 10.26083/tuprints-00019377 |
Corresponding Links: | |
URN: | urn:nbn:de:tuda-tuprints-193772 |
Additional Information: | Keywords: Schottky barrier; resistive switching; zinc oxide; ruthenium oxide; oxygen vacancies |
URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19377 |
PPN: | |
Export: |
![]() |
View Item |