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Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes

Wendel, Philipp ; Dietz, Dominik ; Deuermeier, Jonas ; Klein, Andreas (2021):
Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes. (Publisher's Version)
In: Materials, 14 (10), MDPI, e-ISSN 1996-1944,
DOI: 10.26083/tuprints-00019377,

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Item Type: Article
Origin: Secondary publication via sponsored Golden Open Access
Status: Publisher's Version
Title: Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes
Language: English

The current-voltage characteristics of ZnO/RuO₂ Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

Journal or Publication Title: Materials
Volume of the journal: 14
Issue Number: 10
Publisher: MDPI
Collation: 7 Seiten
Classification DDC: 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM)
Date Deposited: 26 Aug 2021 12:14
Last Modified: 26 Aug 2021 12:14
DOI: 10.26083/tuprints-00019377
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-193772
Additional Information:

Keywords: Schottky barrier; resistive switching; zinc oxide; ruthenium oxide; oxygen vacancies

URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19377
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