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Fermi Level Engineering for Large Permittivity in BaTiO3-Based Multilayers

Chavarría, Christopher Castro ; Payan, Sandrine ; Salvetat, Jean-Paul ; Maglione, Mario ; Klein, Andreas (2021):
Fermi Level Engineering for Large Permittivity in BaTiO3-Based Multilayers. (Publisher's Version)
In: Surfaces, 3 (4), pp. 567-578. MDPI, ISSN 2571-9637,
DOI: 10.26083/tuprints-00019261,

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Item Type: Article
Origin: Secondary publication via sponsored Golden Open Access
Status: Publisher's Version
Title: Fermi Level Engineering for Large Permittivity in BaTiO3-Based Multilayers
Language: English

Multilayered doped BaTiO3 thin films have been fabricated by physical vapor deposition (PVD) on low-cost polycrystalline substrates with the aim to improve dielectric properties by controlling point charge defects at the interfaces. We show that carefully designed interfaces lead to increasing the relative permittivity of the BaTiO3 thin films, in contradiction with the common belief that interfaces behave as dead layers. High relative permittivity up to 1030 and tanδ = 4% at 100 kHz and room temperature were obtained on BaTiO3 multilayered films deposited on Si/Pt substrates by PVD. The large permittivity is suspected to be an extrinsic contribution due to band bending at the interfaces, as inferred by in-situ X-ray photoelectron spectroscopy. A 20-nm depletion layer was found to be associated with an interdiffusion of dopants, as measured by depth profiling with time-of-flight secondary ion mass spectrometry. The films exhibit high permittivity and low dielectric losses stable between 200 and 400 K, which meet the requirement of electronic applications.

Journal or Publication Title: Surfaces
Volume of the journal: 3
Issue Number: 4
Place of Publication: Darmstadt
Publisher: MDPI
Classification DDC: 600 Technik, Medizin, angewandte Wissenschaften > 600 Technik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM)
Date Deposited: 06 Aug 2021 07:19
Last Modified: 06 Sep 2022 18:01
DOI: 10.26083/tuprints-00019261
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-192615
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19261
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