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SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties

Deyu, Getnet Kacha ; Muñoz-Rojas, David ; Rapenne, Laetitia ; Deschanvres, Jean-Luc ; Klein, Andreas ; Jiménez, Carmen ; Bellet, Daniel (2019)
SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties.
In: Molecules, 2019, 24 (15)
doi: 10.25534/tuprints-00009683
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties
Language: English
Date: 11 December 2019
Place of Publication: Darmstadt
Year of primary publication: 2019
Publisher: MDPI
Journal or Publication Title: Molecules
Volume of the journal: 24
Issue Number: 15
DOI: 10.25534/tuprints-00009683
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Origin: Secondary publication via sponsored Golden Open Access
Abstract:

Aluminum-doped tin oxide (SnO 2 :Al) thin films were produced by an ultrasonic spray pyrolysis method. The effect of aluminum doping on structural, optical, and electrical properties of tin oxide thin films synthesized at 420 ∘ C was investigated. Al doping induced a change in the morphology of tin oxide films and yielded films with smaller grain size. SnO 2 thin films undergo a structural reordering and have a texture transition from (301) to (101), and then to (002) preferred cristallographic orientation upon Al doping. The lattice parameters (a and c) decreases with Al doping, following in a first approximation Vegard’s law. The optical transmission does not change in the visible region with an average transmittance value of 72–81%. Conversely, in the near infrared (NIR) region, the plasmon frequency shifts towards the IR region upon increasing Al concentration in the grown films. Nominally undoped SnO 2 have a conductivity of ∼1120 S/cm, which is at least two orders of magnitude larger than what is reported in literature. This higher conductivity is attributed to the Cl − ions in the SnCl 4 ·5(H 2 O) precursor, which would act as donor dopants. The introduction of Al into the SnO 2 lattice showed a decrease of the electrical conductivity of SnO 2 due to compensating hole generation. These findings will be useful for further studied tackling the tailoring of the properties of highly demanded fluorine doped tin oxide (FTO) films.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-96830
Classification DDC: 600 Technology, medicine, applied sciences > 600 Technology
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 11 Dec 2019 14:44
Last Modified: 06 Dec 2023 07:27
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/9683
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