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Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles

Lang, O. ; Klein, Andreas ; Pettenkofer, Christian ; Jaegermann, Wolfram ; Chevy, Alain (2021)
Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles.
In: Journal of Applied Physics, 80 (7)
doi: 10.26083/tuprints-00019891
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Item Type: Article
Type of entry: Secondary publication
Title: Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles
Language: English
Date: 2021
Place of Publication: Darmstadt
Publisher: AIP Publishing
Journal or Publication Title: Journal of Applied Physics
Volume of the journal: 80
Issue Number: 7
DOI: 10.26083/tuprints-00019891
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Origin: Secondary publication service
Abstract:

Epitaxial growth of the strongly lattice mismatched (6.5%) layered chalcogenides InSe and GaSe on each other is obtained with the concept of van der Waals epitaxy as proven by low‐energy electron diffraction and scanning tunnel microscope. InSe/GaSe/InSe and GaSe/InSe/GaSe quantum well structures were prepared by molecular beam epitaxy and their interface properties were characterized by soft x‐ray photoelectron spectroscopy. Valence and conduction band offsets are determined to be 0.1 and 0.9 eV, respectively, and do not depend on deposition sequence (commutativity). As determined from the measured work functions the interface dipole is 0.05 eV; the band lineup between the two materials is correctly predicted by the Anderson model (electron affinity rule).

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-198914
Classification DDC: 500 Science and mathematics > 530 Physics
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 12 Nov 2021 13:50
Last Modified: 23 Jan 2023 07:18
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19891
PPN: 503968757
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