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12% efficient CdTe/CdS thin film solar cells deposited by low-temperature close space sublimation

Schaffner, Judith ; Motzko, Markus ; Tueschen, Alexander ; Swirschuk, Andreas ; Schimper, Hermann-Josef ; Klein, Andreas ; Modes, Thomas ; Zywitzki, Olaf ; Jaegermann, Wolfram (2021):
12% efficient CdTe/CdS thin film solar cells deposited by low-temperature close space sublimation. (Publisher's Version)
In: Journal of Applied Physics, 110 (6), AIP Publishing, ISSN 0021-8979, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019888,
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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: 12% efficient CdTe/CdS thin film solar cells deposited by low-temperature close space sublimation
Language: English
Abstract:

We report 12% efficient CdS/CdTe thin film solar cells prepared by low temperature close space sublimation (CSS). Both semiconductor films, CdS and CdTe, were deposited by high vacuum CSS in superstrate configuration on glass substrates with fluorine doped tin oxide (FTO) front contact. The CdTe deposition was carried out at a substrate temperature (Tsub) of 340° C, which is much lower than that used in conventional processes (>500° C). The CdTe films were treated with the usual CdCl2 activation process. Different optimal annealing times and temperatures were found for low-temperature cells (Tsub 340° C) compared to high-temperature cells (Tsub ¼ 520° C). The influence of the activation step on the morphology of high-temperature and low-temperature CdTe is determined by XRD, AFM, SEM top views, and SEM cross-sections. Grain growth, strong recrystallization, and a reduction of planar defects during the activation step are observed, especially for low-temperature CdTe. Further, the influence of CdS deposition parameters on the solar cell performance is investigated by using three different sets of parameters with different deposition rates and substrate temperatures for the CdS preparation. Efficiencies about 10.9% with a copper-free back contact and 12.0% with a copper-containing back contact were achieved using the low temperature CdTe process.

Journal or Publication Title: Journal of Applied Physics
Journal volume: 110
Number: 6
Publisher: AIP Publishing
Collation: 6 Seiten
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Exzellenzinitiative > Clusters of Excellence > Center of Smart Interfaces (CSI)
Date Deposited: 12 Nov 2021 13:49
Last Modified: 12 Nov 2021 13:49
DOI: 10.26083/tuprints-00019888
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-198886
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19888
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