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In situ preparation and interface characterization of TiO₂/Cu₂S heterointerface

Liu, Guangming ; Schulmeyer, T. ; Thissen, A. ; Klein, Andreas ; Jaegermann, Wolfram (2021):
In situ preparation and interface characterization of TiO₂/Cu₂S heterointerface. (Publisher's Version)
In: Applied Physics Letters, 82 (14), pp. 2269-2271. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019856,
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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: In situ preparation and interface characterization of TiO₂/Cu₂S heterointerface
Language: English
Abstract:

The electronic structures and interface properties of the TiO₂/Cu₂S interface have been in situ studied after each growth step by x-ray and ultraviolet photoelectron spectroscopy. The p-doped Cu₂S films (BEVBM=0.1 eV) were grown on the highly n-doped chemical vapor deposition prepared TiO₂ (BEVBM=3.4 eV) films by thermal evaporation in a multistep growth procedure. The conduction band offset (0.7 eV), valence band offset (2.9 eV) and interface dipole (0.5 eV) were determined based on the quantitative examination of band bending occurring in the Cu2S films at higher coverage, leading to a staggered energy level configuration.

Journal or Publication Title: Applied Physics Letters
Journal volume: 82
Number: 14
Publisher: AIP Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 11 Nov 2021 13:25
Last Modified: 11 Nov 2021 13:25
DOI: 10.26083/tuprints-00019856
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-198567
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19856
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