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Band offset at the CuGaSe₂∕In₂S₃ heterointerface

Schulmeyer, T. ; Klein, Andreas ; Kniese, R. ; Powalla, Michael (2021):
Band offset at the CuGaSe₂∕In₂S₃ heterointerface. (Publisher's Version)
In: Applied Physics Letters, 85 (6), pp. 961-963. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019833,

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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Band offset at the CuGaSe₂∕In₂S₃ heterointerface
Language: English

We have investigated the electronic properties of the CuGaSe₂/In2S₃ heterointerface by photoelectron spectroscopy. In₂S₃ was evaporated by physical vapor deposition onto contamination free polycrystalline CuGaSe₂ surface prepared by the selenium decapping process. A valence band offset DEVB=0.78±0.1 has been determined.

Journal or Publication Title: Applied Physics Letters
Journal volume: 85
Number: 6
Publisher: AIP Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 08 Nov 2021 12:09
Last Modified: 08 Nov 2021 12:09
DOI: 10.26083/tuprints-00019833
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-198330
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19833
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