TU Darmstadt / ULB / TUprints

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

Poulain, Raphaël ; Proost, Joris ; Klein, Andreas (2022)
Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning.
In: Physica status solidi (a), 2019, 216 (23)
doi: 10.26083/tuprints-00016726
Article, Secondary publication, Publisher's Version

[img]
Preview
Text
PSSA_PSSA201900730.pdf
Copyright Information: CC BY 4.0 International - Creative Commons, Attribution.

Download (860kB) | Preview
[img] Text
pssa201900730-sup-0001-suppdata-s1.pdf
Copyright Information: CC BY 4.0 International - Creative Commons, Attribution.

Download (204kB)
Item Type: Article
Type of entry: Secondary publication
Title: Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning
Language: English
Date: 7 April 2022
Place of Publication: Darmstadt
Year of primary publication: 2019
Publisher: Wiley-VCH GmbH
Journal or Publication Title: Physica status solidi (a)
Volume of the journal: 216
Issue Number: 23
Collation: 7 Seiten
DOI: 10.26083/tuprints-00016726
Corresponding Links:
Origin: Secondary publication DeepGreen
Abstract:

Different magnetron sputtering‐based deposition methods of nickel oxide SiO₂‐passivated Si surfaces are compared. Results highlight that the presence of oxygen in the deposition chamber during reactive sputtering drastically affects the Si/SiO₂ interface. An alternative method for the preparation of NiO is the sputtering of metallic nickel in oxygen‐free atmosphere followed by a post oxidation of the deposited layer in an oxygen atmosphere without plasma exposition is proposed. This method is introduced as metal layer oxidation (MLO). Using this technique, the barrier height on n‐type silicon increases from ≈0.4 eV for reactively sputtered NiO to more than 0.6 eV for the MLO method. In situ photoelectron spectroscopy evidences the formation of an extra electronic state when NiO is reactively sputtered, which is assigned to the intense oxygen ion bombardment of the Si/SiO₂ surface during the process. This extra‐electronic state pins the silicon energy bands in an undesirable position. The extra‐electronic state is associated with oxygen interstitial in the SiO₂ implanted during reactive sputtering.

Uncontrolled Keywords: Fermi-level pinning, interface passivation, NiO, photoemission, Si
Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-167268
Classification DDC: 500 Science and mathematics > 530 Physics
600 Technology, medicine, applied sciences > 620 Engineering and machine engineering
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM)
Date Deposited: 07 Apr 2022 12:16
Last Modified: 06 Dec 2023 08:15
SWORD Depositor: Deep Green
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/16726
PPN: 504222368
Export:
Actions (login required)
View Item View Item